Photochemically Activated Flexible Metal-Oxide Transistors and Circuits Using Low Impurity Aqueous System
- Authors
- Heo, Jae-Sang; Kim, Jae-Hyun; Kim, Jaekyun; Kim, Myung-Gil; Kim, Yong-Hoon; Park, Sung Kyu
- Issue Date
- Feb-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Aqueous solution; photochemical activation; sol-gel; indium-gallium-zinc oxide; thin-film transistor; circuit
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.36, no.2, pp 162 - 164
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 36
- Number
- 2
- Start Page
- 162
- End Page
- 164
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9937
- DOI
- 10.1109/LED.2014.2382136
- ISSN
- 0741-3106
1558-0563
- Abstract
- High mobility flexible metal-oxide thin-film transistors and circuits have been fabricated on an ultrathin plastic substrate using environmentally benign aqueous solution system and low-temperature photochemical activation process (similar to 150 degrees C). Results show that the indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) fabricated from nitrate-based precursors in aqueous solution outperform the devices from acetate-based precursors in alcohol solution. Here, IGZO TFTs and seven-stage ring oscillators are demonstrated on a 3 similar to 5 mu m-thick polyimide substrates with an average mobility of >6.9 cm(2)/V-s, subthreshold slope of similar to 0.14 V/decade, and oscillation frequency of similar to 340 kHz corresponding to 210 ns of propagation delay per stage at a supply bias of 20 V.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
- College of Natural Sciences > Department of Chemistry > 1. Journal Articles
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