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Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodesGo to Link

Kim, Kyu-Sang; Han, Dong-Pyo; Kim, Hyun-Sung; Shim, Jong-In

ArticleIssue Date2014CitationApplied Physics Letters, v.104, no.9, pp 1 - 5PublisherAmerican Institute of Physics
SCISCIESCOPUS
Measurement of Internal Electric Field in GaN-Based Light-Emitting DiodesGo to Link

Park, Su-Ik; Lee, Jong-Ik; Jang, Dong-Hyun; Kim, Hyun-Sung; Shin, Dong-Soo; Ryu, Han-Youl; Shim, Jong-In

ArticleIssue Date2012CitationIEEE Journal of Quantum Electronics, v.48, no.4, pp 500 - 506PublisherInstitute of Electrical and Electronics Engineers
SCOPUS
Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniquesGo to Link

Shin, Dong Soo; Han, Dong-Pyo; Zheng, Dong-Guang; Oh, Chan-Hyoung; Kim, Hyun-Sung; Kim, Kyu-Sang; Shim, Jong-In

ArticleIssue Date2015CitationProceedings of SPIE - The International Society for Optical Engineering, v.9363, pp 1 - 4PublisherSPIE
SCIESCOPUS
Rate equation analysis of efficiency droop in InGaN light-emitting diodesGo to Link

Ryu, Han-Youl; Kim, Hyun-Sung; Shim, Jong-In

ArticleIssue Date2009CitationApplied Physics Letters, v.95, no.8, pp 1 - 4PublisherAmerican Institute of Physics
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