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SCIESCOPUS
Divulge of Root Cause Failure in Individual Cells of 2x nm Technology DDR4 DRAM at Operating TemperatureGo to Link

Shahzadi, Nosheen; Park, Myungsang; Yun, Donghyuk; Baeg, Sanghyeon

ArticleIssue Date2022CitationIEEE Transactions on Electron Devices, v.69, no.5, pp 2338 - 2345PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray RadiationGo to Link

Yun, Donghyuk; Park, Myungsang; Bak, Geunyong; Baeg, Sanghyeon; Wen, Shi-Jie

ArticleIssue Date2021CitationIEEE ACCESS, v.9, pp 137514 - 137523PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Soft error study on DDR4 SDRAMs using a 480 MeV proton beamGo to Link

Park, Myungsang; Jeon, Sanghoon; Bak, Geunyong; Lim, Chulseung; Baeg, Sanghyeon; Wen, Shijie; Wong, Richard; Yu, Nick

ArticleIssue Date2017CitationIEEE International Reliability Physics Symposium Proceedings, pp 1 - 6PublisherInstitute of Electrical and Electronics Engineers Inc.
SCISCIESCOPUS
Study of proton radiation effect to row hammer fault in DDR4 SDRAMsGo to Link

Lim, Chulseung; Park, Kyungbae; Bak, Geunyong; Yun, Donghyuk; Park, Myungsang; Baeg, Sanghyeon; Wen, Shi-Jie; Wong, Richard

ArticleIssue Date2018CitationMICROELECTRONICS RELIABILITY, v.80, pp 85 - 90PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Study of TID effects on one row hammering using gamma in DDR4 SDRAMsGo to Link

Yun, Donghyuk; Park, Myungsang; Lim, Chulseung; Baeg, Sanghyeon

ArticleIssue Date2018CitationIEEE International Reliability Physics Symposium Proceedings, v.2018, pp PSE.21 - PSE.25PublisherInstitute of Electrical and Electronics Engineers Inc.
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