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Effect of annealing temperature on switching properties in Si-doped HfO2 films
- Authors
- Park, S.; Chun, M.C.; Kim, M.J.; Lee, J.Y.; Cho, Y.; Kim, C.; Jo, J.Y.; Kang, B.S.
- Issue Date
- Apr-2021
- Publisher
- American Institute of Physics Inc.
- Citation
- Journal of Applied Physics, v.129, no.16, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Applied Physics
- Volume
- 129
- Number
- 16
- Start Page
- 1
- End Page
- 10
- ISSN
- 0021-8979
- Abstract
- The discovery of hafnium oxide-based ferroelectrics has resulted in the pursuit of ferroelectric field-effect transistors with higher scalability, lower power consumption, and enhanced switching speed. An in-depth understanding of ferroelectric polarization switching kinetics is essential for both scientific and technological purposes. Polarization switching is analyzed based on the nucleation-limited switching model with a Lorentzian distribution of logarithmic switching times. The activation field governing the switching kinetics is explained by a dependence on the density of oxygen vacancies, which are caused by various annealing temperatures. This indicates that oxygen vacancies can be a dominant factor in the polarization switching of Si-doped HfO2 films. © 2021 Author(s).
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)