Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes
- Authors
- Lee, Koh Eun; Choi, Rak Jun; Kang, Hyunwoong; Shim, Jong In; Ryu, Sang-Wan; Cho, Jaehee; Lee, June Key
- Issue Date
- Feb-2022
- Publisher
- Electrochemical Society, Inc.
- Keywords
- electrochemical potentiostatic activation; ultraviolet; light emitting diode; p-GaN; hole concentration; internal quantum efficiency
- Citation
- ECS Journal of Solid State Science and Technology, v.11, no.2, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS Journal of Solid State Science and Technology
- Volume
- 11
- Number
- 2
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/107973
- DOI
- 10.1149/2162-8777/ac53f8
- ISSN
- 2162-8769
- Abstract
- The electrochemical potentiostatic activation (EPA) method was performed by removing hydrogen atoms from the inside of the Mg-doped p-GaN/p-AlGaN multilayer of 270 nm AlGaN-based UV-C light-emitting diodes (UV-C LEDs). The EPA evaluation was controlled among the applied voltages of 2, 3, and 4 V for 10 min under 1.0 M HCl solution, and the hole concentration inside the p-GaN/p-AlGaN multilayer was decreased. To evaluate the characteristics and reliability of UV-C LEDs, the basic flip chip process was applied and then mounted on the AlN ceramic package by AuSn eutectic bonding. Compared to the as-fabricated LED, we demonstrated an increase of over 8% in light output power at 350 mA in UV-C LEDs by improving internal quantum efficiency (IQE) with EPA treatment at 3 V. The enhanced IQE and higher EQE contributed to improving the reliability of the LEDs, thus resulting in a similar to 7% lifetime extension.
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