Theoretical studies on in-plane polarization characteristics of (11(2)over-bar0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substratesTheoretical studies on in-plane polarization characteristics of (11$$\bar{2}$$0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates
- Other Titles
- Theoretical studies on in-plane polarization characteristics of (11$$\bar{2}$$0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates
- Authors
- Park, Seoung-Hwan; Shim, Jong-In; Shin, Dong-Soo
- Issue Date
- Jul-2022
- Publisher
- 한국물리학회
- Keywords
- Optical polarization; GaN; InGaN; Strain relaxation; Quantum well; Light-emitting diodes
- Citation
- Journal of the Korean Physical Society, v.81, no.1, pp 45 - 48
- Pages
- 4
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 81
- Number
- 1
- Start Page
- 45
- End Page
- 48
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/112739
- DOI
- 10.1007/s40042-022-00489-9
- ISSN
- 0374-4884
1976-8524
- Abstract
- The in-plane polarization characteristics of nonpolar (11 (2) over bar0) InxGa1-xN/GaN (x = 0.2) quantum-well (QW) structures are investigated as a function of In content in InyGa1-yN substrates by using the multiband effective-mass theory. States constituting the topmost valence subband change from vertical bar Y' >-like to vertical bar Z' >-like as the In content in the InGaN substrate increases. In the case of the QW structure grown on a conventional GaN substrate (y = 0.0), the y'-polarized matrix element is much larger than the x'-polarized matrix element. However, the y'-polarized matrix element rapidly decreases with increasing y content in the InGaN substrate and becomes similar to the x'-polarized matrix element. As a result, the magnitude of the in-plane optical anisotropy becomes smaller for QW structures with higher substrate In content because both x'- and y' -polarized emission peaks are similar to each other.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/112739)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.