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Area-Selective Atomic Layer Deposition of High-Quality Ru Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents,
- Authors
- Lee, Jeong-Min; Lee, Seo-Hyun; Oh, Jieun; Kim, Woo-Hee
- Issue Date
- Feb-2023
- Publisher
- Elsevier BV
- Keywords
- Aminosilane inhibitor; Area-selective atomic layer deposition; Growth retardation; Ruthenium; Surface modification
- Citation
- Materials Letters, v.333, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials Letters
- Volume
- 333
- Start Page
- 1
- End Page
- 4
- ISSN
- 0167-577X
1873-4979
- Abstract
- We report the effects of surface modification by vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) molecules as short alkylating agents on technologically important substrates of Si, SiO2, TiN, and W. In this study, tricarbonyl(trimethylenemethane) ruthenium [Ru(TMM)(CO)3] was employed as a metal–organic precursor for atomic layer deposition (ALD) of Ru, which produced high-quality Ru films with significantly low resistivity and high growth-per-cycle. Through surface modification of vapor-dosed DEATMS molecules, significant growth retardation against the ALD Ru process was selectively found on SiO2 and TiN in contrast to Si(-H) and W substrates. With applying chemo-selectively inhibitory characteristics, we successfully demonstrate area selective deposition of ALD Ru films on a patterned TiN/Si substrate.
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Related Researcher
- Kim, Woo Hee
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)