Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers
- Authors
- Park, Seoung-Hwan; Shim, Jong-In; Shin, Dong-Soo
- Issue Date
- Jul-2023
- Publisher
- IOP Publishing Ltd
- Keywords
- type-II quantum wells; GaNSb; GaN; linewidth enhancement factor; optical gain; refractive index
- Citation
- Japanese Journal of Applied Physics, v.62, no.7, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 62
- Number
- 7
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/113698
- DOI
- 10.35848/1347-4065/ace39a
- ISSN
- 0021-4922
1347-4065
- Abstract
- We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost independent of the peak-gain coefficient. This behavior is contrasted with that of the conventional type-I InGaN/GaN QW structure, whose linewidth enhancement factor increases as the peak-gain coefficient increases. These results can be explained by the peak-gain dependencies of the differential refractive-index change and the differential gain. Moreover, the type-II red InGaN/GaNSb/GaN QW laser yields much smaller values of the linewidth enhancement factor than the conventional type-I InGaN/GaN QW laser. The type-II red InGaN/GaNSb/GaN QW laser with a relatively small, excitation-independent linewidth enhancement factor is expected to be highly useful for many practical applications.
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