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Area-Selective Atomic Layer Deposition of Ruthenium Thin Films Using Aldehyde Inhibitors
- Authors
- Park, Haneul; Oh, Jieun; Lee, Jeong-Min; Kim, Woo-Hee
- Issue Date
- May-2023
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- aldehyde inhibitor; area-selective atomic layer deposition; Ru ALD; self-assembled monolayer
- Citation
- 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings, pp 1 - 3
- Pages
- 3
- Indexed
- SCOPUS
- Journal Title
- 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings
- Start Page
- 1
- End Page
- 3
- ISSN
- 2380-632X
2380-6338
- Abstract
- Recently, area selective atomic layer deposition (AS-ALD) has attached attention for alternative approach of device downscaling in 3D semiconductor fabrication. We reported Ru AS-ALD through vapor-phase adsorption of aldehyde self-assembled monolayers (SAMs). In this study, we investigate Ru ALD process and explored inhibitory efficacy of aldehyde inhibitors on various substrates, including nitride, oxide, and metal surfaces. As a results of chemo-selective adsorption of aldehyde molecules, nitride substrates were selectively passivated, thereby leading to growth retardation of Ru ALD. Finally, through surface functionalization by using aldehyde inhibitors, we achieved Ru AS-ALD on patterned TiN/SiO2 surfaces. © 2023 IEEE.
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Related Researcher
- Kim, Woo Hee
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)