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Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few-Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice-Mismatch with Seed Substrates
- Authors
- Heo, Hoseok; Sung, Ji Ho; Ahn, Ji-Hoon; Ghahari, Fereshte; Taniguchi, Takashi; Watanabe, Kenji; Kim, Philip; Jo, Moon Ho
- Issue Date
- Jan-2017
- Publisher
- Wiley-VCH Verlag
- Keywords
- 2D materials; metal chalcogenide; superlattice; thin film growth modes; van der Waals epitaxy
- Citation
- Advanced Electronic Materials, v.3, no.2, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Advanced Electronic Materials
- Volume
- 3
- Number
- 2
- Start Page
- 1
- End Page
- 7
- ISSN
- 2199-160X
- Abstract
- Different growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models.
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Related Researcher
- Ahn, Ji Hoon
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)