Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
- Authors
- Hyun, Cheol Min; Choi, Jeong Hun; Lee, Myoung Jae; Ahn, Ji-Hoon
- Issue Date
- 2017
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.111, no.1, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 111
- Number
- 1
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11575
- DOI
- 10.1063/1.4992115
- ISSN
- 0003-6951
- Abstract
- The photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 μV/K, which is 3.5 times larger than that of its bulk counterpart. © 2017 Author(s).
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