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Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure

Authors
Hyun, Cheol MinChoi, Jeong HunLee, Myoung JaeAhn, Ji-Hoon
Issue Date
2017
Publisher
American Institute of Physics
Citation
Applied Physics Letters, v.111, no.1, pp.1 - 5
Indexed
SCIE
SCOPUS
Journal Title
Applied Physics Letters
Volume
111
Number
1
Start Page
1
End Page
5
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/11575
DOI
10.1063/1.4992115
ISSN
0003-6951
Abstract
The photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 μV/K, which is 3.5 times larger than that of its bulk counterpart. © 2017 Author(s).
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ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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