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Contamination Removal From UV and EUV Photomasks
- Issue Date
- 2017
- Publisher
- Elsevier Inc.
- Keywords
- Aerosol cleaning; Cleaning techniques; EUVL mask; Jet spray cleaning; Megasonic cleaning; Organics removal; Ozone cleaning; Particle removal; Photomask; SPM cleaning
- Citation
- Developments in Surface Contamination and Cleaning, v.9, pp.135 - 173
- Indexed
- SCOPUS
- Journal Title
- Developments in Surface Contamination and Cleaning
- Volume
- 9
- Start Page
- 135
- End Page
- 173
- Abstract
- In semiconductor fabrication industries, photomask cleaning with no pattern damage is a critical issue, especially for advanced technology nodes. Thus, optimization of cleaning techniques adopted for photomask cleaning or development of new cleaning technique is always of great interest to meet process requirements. In this book chapter, the sources of contaminants on photomask and their impact on imprinted images are first discussed. Then a critical review is presented on the wide spectrum of cleaning techniques and strategies that are adopted for the removal of particulate contaminants and organics from the photomask. The applicability of each technique and its limitations are also examined. Because extreme ultraviolet lithography (EUVL) is considered to be a next-generation lithography, a separate section is devoted to EUVL mask-cleaning techniques. © 2017 Elsevier Inc. All rights reserved.
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Related Researcher
- Park, Jin Goo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)