Investigation of optical processes in InGaN-based light-emitting diodes using electroreflectance and photocurrent spectroscopies

Abstract

Light-emitting diodes (LEDs) are considered as the most promising candidate for the next-generation lighting. They are also widely used as backlight units (BLU) for displays and light sources for various other applications. To extend the range of applications of the LEDs, the improvement of the LED performance is required. Since LEDs are optoelectronics devices that convert the electrical power into the optical power, the understanding of how photons generated in LEDs behave is most important. In this paper, we have investigated the optical processes in InGaN-based LEDs using electroreflectance (ER) and photocurrent (PC) spectroscopies. We have chosen some factors that affects the optical transition in LEDs and performed the ER and PC spectroscopies by changing those factors. © 2017 SPIE.