Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra
- Authors
- Islam, Abu Bashar Mohammad Hamidul; Shin, Dong-Soo; Kwak, Joon Seop; Shim, Jong-In
- Issue Date
- Dec-2023
- Publisher
- Electrochemical Society, Inc.
- Citation
- ECS Journal of Solid State Science and Technology, v.12, no.12, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS Journal of Solid State Science and Technology
- Volume
- 12
- Number
- 12
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/117794
- DOI
- 10.1149/2162-8777/ad0fed
- ISSN
- 2162-8769
2162-8777
- Abstract
- This work investigates the turn-on voltage (V on) estimation methods from experimental data of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra from near-ultraviolet to green wavelengths. Three different methods are examined: fixed current intercept, linear fitting of current-voltage curve, and the minimum ideality factor (n ideal). The voltage at minimum n ideal consistently represents the on-state of LEDs since it describes the carrier recombination processes reflected in light output power (LOP) and the external quantum efficiency (EQE). Beyond the voltage at minimum n ideal, samples' LOPs start to increase abruptly, with the EQEs reaching ˃= 54% of the peak EQE values. For V on determined by other methods, samples'LOPs are already turned on and the EQEs exceed their peak value. Therefore, using the minimum n ideal is a suitable method for determining Von of an LED.
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