Space–Charge-Limited Photocurrent as a Possible Cause for Low Power Conversion Efficiency in GaInN/GaN-Based Optoelectronic Semiconductorsopen access
- Authors
- Kim, Jiwon; Park, Changeun; Shin, Dong-Soo; Shim, Jong-In; Zheng, Dong-Guang; Han, Dong-Pyo
- Issue Date
- Mar-2024
- Publisher
- John Wiley and Sons Inc
- Keywords
- Goodman and Rose theory; III-nitride optoelectronic semiconductors; power conversion efficiency; space–charge-limited photocurrents
- Citation
- Physica Status Solidi (A) Applications and Materials Science, pp 1 - 6
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Physica Status Solidi (A) Applications and Materials Science
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/118280
- DOI
- 10.1002/pssa.202300893
- ISSN
- 1862-6300
1862-6319
- Abstract
- This study attempts to understand the cause of low power conversion efficiency (PCE) in III-nitride optoelectronic semiconductors under optical operation. For this purpose, a GaInN/GaN heterojunction semiconductor is fabricated, and the photoexcited current–voltage (PEJV) curves are carefully measured depending on the optical excitation power and temperature. The results show unexpected excitation power- and temperature-dependent behaviors, that is, the PCE decreases with increasing excitation power and increases with increasing temperature. To understand this, the space–charge-limited photocurrent (JPh,SCL) theory (also referred to as Goodman and Rose theory) is employed, where the accumulated charge carriers in the active layer play a significant role. The conduction of JPh,SCL is ascertained by analyzing the PEJV curves. The conduction of JPh,SCL is investigated as a possible cause of the low PCE, revealing that the conduction of JPh,SCL could limit the high-power operation of the device. © 2024 The Authors. physica status solidi (a) applications and materials science published by Wiley-VCH GmbH.
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