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Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers
- Authors
- Lee, Seung Ryul; Kang, Bo Soo
- Issue Date
- May-2024
- Publisher
- Elsevier B.V.
- Keywords
- Al<sub>2</sub>O<sub>3</sub>; Diffusion barrier; Resistive switching; RRAM; TaO<sub>x</sub>
- Citation
- Current Applied Physics, v.61, pp 75 - 79
- Pages
- 5
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Current Applied Physics
- Volume
- 61
- Start Page
- 75
- End Page
- 79
- ISSN
- 1567-1739
1878-1675
- Abstract
- We present a novel bipolar resistive switching memory based on TaOx, featuring a Ru/Al2O3/Ta2O5/TaOx/Al2O3/W structure. Thin Al2O3 layers play a crucial role as diffusion barriers, preventing undesirable interfacial reactions at the top and bottom interfaces. They support the stable formation of the Schottky barrier near the Ru top electrode through redox reactions during operation, resulting in highly reliable bipolar resistive switching. The device exhibits excellent memory performance, including a fast operation speed (∼10 ns), good switching endurance (∼106 cycles), and robust data retention (>104 s at 200 °C). © 2024
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)