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A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductorsopen access
- Authors
- Ryu, Yung Ryel; Hong, Sung Ki; Schubert, E. Fred; Jeon, Dong-Min; Shin, Dong-Soo; Shim, Jong-In; Kim, Sang-Mook; Baek, Jong Hyeob
- Issue Date
- Apr-2024
- Publisher
- American Institute of Physics
- Citation
- AIP Advances, v.14, no.4, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- AIP Advances
- Volume
- 14
- Number
- 4
- Start Page
- 1
- End Page
- 7
- ISSN
- 2158-3226
2158-3226
- Abstract
- We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution displays. © 2024 Author(s).
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)