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Active-Layer Characteristics of Eu-Doped GaN-Based Red Light-Emitting Diodes Investigated by Photoexcitation Measurements
- Authors
- 신동수
- Issue Date
- 17-Oct-2024
- Place
- Hanwha Resorts Haeundae, Busan, Korea
- Conference Name
- The 11th Asia-Pacific Workshop on Widegap Semiconductors
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)