Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes
- Authors
- Kim, Kyu-Sang; Shim, Jong-In
- Issue Date
- Mar-2020
- Publisher
- 한국물리학회
- Keywords
- InGaN quantum wells; Patterned sapphire substrate; Strain
- Citation
- Journal of the Korean Physical Society, v.76, no.6, pp.522 - 526
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 76
- Number
- 6
- Start Page
- 522
- End Page
- 526
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1250
- DOI
- 10.3938/jkps.76.522
- ISSN
- 0374-4884
- Abstract
- Herein, two kinds of blue InGaN light-emitting diodes (LEDs) were compared in order to understand the effect of the strain originating from two different sapphire substrates. One of the LED types was grown on a patterned sapphire substrate (PSS), and the other was grown on a conventional sapphire substrate (CSS). The internal strains biased on InGaN quantum wells were compared by studying the time-resolved photoluminescence and the electroreflectance. Through analysis of the dynamic capacitance dispersion measurements, the relation between the trap states and trap density of the AlGaN electron blocking layer/GaN barrier interface above the InGaN quantum wells can be understood in great detail. The trapped charges of the CSSs have faster response times than those of the PSSs; this is attributed to the stronger piezo-field, which induces the AlGaN EBL/GaN barrier interface trap states to be effectively located at shallower levels from the conduction band.
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