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On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes
- Authors
- Lee, Gyeong Won; Shim, Jong-In; Shin, Dong-Soo
- Issue Date
- Jul-2016
- Publisher
- American Institute of Physics
- Keywords
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CURRENT DENSITY; CURRENTS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICO
- Citation
- Applied Physics Letters, v.109, no.3, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 109
- Number
- 3
- Start Page
- 1
- End Page
- 5
- ISSN
- 0003-6951
- Abstract
- While there have been many discussions on the standard Si pn-diodes, little attention has been paid and confusion still arises on the ideality factor of the radiative recombination current in semiconductor light-emitting diodes (LEDs). In this letter, we theoretically demonstrate and experimentally confirm by using blue and infrared semiconductor LEDs that the ideality factor of the radiative recombination current is unity especially for low-current-density ranges. We utilize the data of internal quantum efficiency measured by the temperature-dependent electroluminescence to separate the radiative current component from the total current. Published by AIP Publishing.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)