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열처리 후공정이 HAZO-채널 박막 트랜지스터의 특성에 미치는 영향Effects of thermal post-treatment on the characteristics of HAZO-channel thin film transistors
- Other Titles
- Effects of thermal post-treatment on the characteristics of HAZO-channel thin film transistors
- Issue Date
- Jul-2016
- Publisher
- 대한전기학회
- Citation
- 2016년도 대한전기학회 하계학술대회논문집, pp 1157 - 1158
- Pages
- 2
- Indexed
- OTHER
- Journal Title
- 2016년도 대한전기학회 하계학술대회논문집
- Start Page
- 1157
- End Page
- 1158
- Abstract
- Oxide thin film transistors (O-TFTs) were fabricated by using hafnium-doped aluminum-zinc oxide (HAZO) films as the active-channel. The HAZO films were deposited via co-sputtering method. Furnace annealing was carried out on the deposited HAZO films. The effects of the post-treatment on the transmittance and crystalline structure of the HAZO films were analyzed as functions of the post-treatment conditions used. It was observed that the off-current of the HAZO-TFTs drastically decreased after the furnace annealing. The experiment results also showed that furnace annealing would be an effective method for improving the electrical characteristics of HAZO-TFTs.
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)