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채널층(HAZO)과 게이트 절연층(SiO₂) 사이의 완충막(Al₂O₃)이 박막 트랜지스터의 특성에 미치는 영향Effects of a buffer layer (Al₂O₃) between channel (HAZO) and gate oxide (SiO₂) on the characteristics of thin film transistors
- Other Titles
- Effects of a buffer layer (Al₂O₃) between channel (HAZO) and gate oxide (SiO₂) on the characteristics of thin film transistors
- Issue Date
- Jul-2016
- Publisher
- 대한전기학회
- Citation
- 2016년도 대한전기학회 하계학술대회논문집, pp.1159 - 1160
- Indexed
- OTHER
- Journal Title
- 2016년도 대한전기학회 하계학술대회논문집
- Start Page
- 1159
- End Page
- 1160
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)