Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts
- Authors
- Ha, Min-Woo; Choi, Kangmin; Jo, Yoo Jin; Jin, Hyun Soo; Park, Tae Joo
- Issue Date
- Apr-2016
- Publisher
- 대한전자공학회
- Keywords
- GaN; AlGaN; Schottky barrier diode; breakdown voltage; annealing
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.2, pp.179 - 184
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 16
- Number
- 2
- Start Page
- 179
- End Page
- 184
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14128
- DOI
- 10.5573/JSTS.2016.16.2.179
- ISSN
- 1598-1657
- Abstract
- In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at 500 degrees C resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of 20 mu m. However, these annealing conditions also resulted in an increase in the contact resistance of 0.183 Omega-mm, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.
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