Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components
- Authors
- Kim, Hyewon; Kim, Joonhyun; Eo, Yungseon
- Issue Date
- Mar-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- De-embedding; interconnect; measurements; scattering parameters; transmission line (TL)
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.64, no.3, pp.931 - 938
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
- Volume
- 64
- Number
- 3
- Start Page
- 931
- End Page
- 938
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14193
- DOI
- 10.1109/TMTT.2016.2519018
- ISSN
- 0018-9480
- Abstract
- A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a 0.18-mu m SK Hynix CMOS process and 0.13-mu m Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequencyvariant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components.
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