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Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
- Authors
- Ahn, Ji-Hoon; Kim, Ja-Yong
- Issue Date
- Jan-2016
- Publisher
- Elsevier BV
- Keywords
- Atomic layer deposition; Capacitor electrode; Rapid thermal annealing; Strontium ruthenate
- Citation
- Microelectronic Engineering, v.149, pp 62 - 65
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Microelectronic Engineering
- Volume
- 149
- Start Page
- 62
- End Page
- 65
- ISSN
- 0167-9317
1873-5568
- Abstract
- In this study, we investigated the effect of annealing conditions on the formation of SrRuO3 films by the interfacial reaction of SrO/RuO2 bi-layer films. We found that the annealing temperature and thickness of the SrO layer along with the annealing atmosphere were critical variables in the formation of the conformal SrRuO3 film. By annealing SrO(20 nm)/RuO2 bi-layer film at 700 °C in O2 atmosphere at 1 Torr, the conformal SrRuO3 film was formed. Finally, we evaluated the potential applicability of the SrRuO3 film as a functional electrode for perovskite-structured dielectrics, and the dielectric constant of SrTiO3 film deposited on the SrRuO3 electrode increased by almost 2.5 times in comparison with that of a film on a Ru electrode. © 2015 Published by Elsevier B.V.
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Related Researcher
- Ahn, Ji Hoon
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)