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Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs
- Authors
- Choi, H.-S.; Shim, J.-I.
- Issue Date
- Jan-2016
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.2, pp 1 - 2
- Pages
- 2
- Indexed
- SCOPUS
- Journal Title
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- Volume
- 2
- Start Page
- 1
- End Page
- 2
- Abstract
- This paper reports the analysis of the near-ultraviolet light-emitting-diodes (NUV LEDs) characteristics with increasing the number of QWs from 5 to 7 by same growth process. By means of optical, electrical characterization and carrier rate equation analysis, we show that the NUV LEDs performances were improved with increasing the number of QWs by decreasing the non-radiative recombination rate. © 2015 IEEE.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)