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Radiative and non-radiative carrier lifetimes in InGaN-based light-emitting diodes investigated by impedance analysis
- Issue Date
- Jan-2016
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.1, pp 1 - 2
- Pages
- 2
- Indexed
- SCOPUS
- Journal Title
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- Volume
- 1
- Start Page
- 1
- End Page
- 2
- Abstract
- To investigate the efficiency droop in InGaN-based light-emitting diodes, we have measured the differential carrier lifetimes using the electrical method. After separating the radiative and non-radiative carrier lifetimes using the internal quantum efficiency, we discuss their implications. © 2015 IEEE.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)