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Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)
- Authors
- Shim, Jong In; Shin, Dong Soo
- Issue Date
- Feb-2016
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Capacitance-voltage characteristics; Light emitting diodes; Photoconductivity; Power generation; Quantum well devices; Temperature measurement; Voltage measurement
- Citation
- MOC 2015 - Technical Digest of 20th Microoptics Conference, pp 1 - 2
- Pages
- 2
- Indexed
- SCIE
SCOPUS
- Journal Title
- MOC 2015 - Technical Digest of 20th Microoptics Conference
- Start Page
- 1
- End Page
- 2
- Abstract
- To understand how each experimental parameter influences optoelectronic performances of InGaN-based LEDs, a method of systematic analysis that assesses the interrelations independently and quantitatively is absolutely necessary. Here, we introduce various characterization techniques to clarify the performance of LEDs and hidden severity of the detrimental effects, starting from the simple I-V measurement to more sophisticated temperature-dependent, spectroscopic, and LED efficiency measurements. © 2015 The Japan Society of Applied Physics.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)