Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO2 film on Ge substrate for interface passivation
- Authors
- Cho, Deok-Yong; Seok, Tae Jun; Jin, Hyun Soo; Song, Hochul; Han, Seungwu; Park, Tae Joo
- Issue Date
- Sep-2015
- Publisher
- Wiley - VCH Verlag GmbH & CO. KGaA
- Keywords
- HfO2 films; sulfur oxidation; high-k dielectrics; X-ray absorption spectroscopy
- Citation
- Physica Status Solidi - Rapid Research Letetrs, v.9, no.9, pp.511 - 515
- Indexed
- SCIE
SCOPUS
- Journal Title
- Physica Status Solidi - Rapid Research Letetrs
- Volume
- 9
- Number
- 9
- Start Page
- 511
- End Page
- 515
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/17398
- DOI
- 10.1002/pssr.201510237
- ISSN
- 1862-6254
- Abstract
- Sulfur was embedded in atomic-layer-deposited (ALD) HfO2 films grown on Ge substrate by annealing under H2S gas before and after HfO2 ALD. The chemical states of sulfur in the film were examined by S K-edge X-ray absorption spectroscopy. It was revealed that the valences of S-ions were mostly -2 at Ge/HfO2 interface (GeSx or HfO2-ySy to passivate the interface), while they were mostly +6 in HfO2 layers (sulfates; HfO2-z(SO4)(z)). The leakage current density in post-deposition-treated film was lower than that in pre-deposition-treated one. This suggests that the passivation of defects in oxide layer by sulfate ions is more effective to lower the leakage current rather than the interface defect passivation by S-2 ions. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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