Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD
- Authors
- Lee, Seung Ryul; Ahn, Byung Tae; Kang, Bo Soo
- Issue Date
- Jun-2015
- Publisher
- SPRINGER
- Keywords
- CHEMICAL-VAPOR-DEPOSITION; OXIDE-MEDIATED EPITAXY; REACTIVE DEPOSITION; SI(100) SUBSTRATE; SILICON; COBALT; SILICIDATION; STABILITY; SI(001); LAYER
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.119, no.4, pp.1437 - 1441
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 119
- Number
- 4
- Start Page
- 1437
- End Page
- 1441
- ISSN
- 0947-8396
- Abstract
- A uniform epitaxial CoSi2 layer could be grown on a Si(100) substrate by deposition of a CoN (x) interlayer followed by an in situ annealing process. The amorphous Si-N layer which is formed at the CoN (x) /Si interface plays a role in inhibiting excessive Co incorporation into Si layer and consequently enhancing the epitaxial growth of CoSi2 layer. However, the Si-N layer also limits the growth of thick CoSi2 layer. Therefore, the thickness of the amorphous Si-N layer is an important factor for the epitaxial growth of the CoSi2 layer with uniform structure and low sheet resistance.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)