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Effects of the fluctuation in a singly-connected conducting filament structure on the distribution of the reset parameters in unipolar resistance switching

Authors
Na, Sang-ChulLee, KeundongChun, Min ChulKwon, Young-SunShin, Hye-JinLee, SangikPark, Bae HoKang, Bo Soo
Issue Date
Mar-2015
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.106, no.13, pp.1 - 5
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
106
Number
13
Start Page
1
End Page
5
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18775
DOI
10.1063/1.4916742
ISSN
0003-6951
Abstract
The reset current (I-reset), voltage (V-reset), and resistance of the low resistance state, as functions of the compliance current (CC), were investigated in a Pt/NiO/Pt structure that showed unipolar resistance switching. Interestingly, the I-reset and the V-reset measured at low CCs were found to be widely distributed. In order to explain the behavior of the reset parameters for the singly-connected conducting filament (CF) structure, a simple model of CFs was employed whose width variation follows the Gaussian distribution. The wide distribution of the reset parameters can be attributed to the fluctuation in the number and/or the width of the CFs. (C) 2015 AIP Publishing LLC.
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