Effects of the fluctuation in a singly-connected conducting filament structure on the distribution of the reset parameters in unipolar resistance switching
- Authors
- Na, Sang-Chul; Lee, Keundong; Chun, Min Chul; Kwon, Young-Sun; Shin, Hye-Jin; Lee, Sangik; Park, Bae Ho; Kang, Bo Soo
- Issue Date
- Mar-2015
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.106, no.13, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 106
- Number
- 13
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18775
- DOI
- 10.1063/1.4916742
- ISSN
- 0003-6951
- Abstract
- The reset current (I-reset), voltage (V-reset), and resistance of the low resistance state, as functions of the compliance current (CC), were investigated in a Pt/NiO/Pt structure that showed unipolar resistance switching. Interestingly, the I-reset and the V-reset measured at low CCs were found to be widely distributed. In order to explain the behavior of the reset parameters for the singly-connected conducting filament (CF) structure, a simple model of CFs was employed whose width variation follows the Gaussian distribution. The wide distribution of the reset parameters can be attributed to the fluctuation in the number and/or the width of the CFs. (C) 2015 AIP Publishing LLC.
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