Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
- Authors
- Han, Dong-Pyo; Oh, Chan-Hyoung; Kim, Hyunsung; Shim, Jong-In; Kim, Kyu-Sang; Shin, Dong-Soo
- Issue Date
- Feb-2015
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Dot emission; light-emitting diodes (LEDs); threading dislocations (TDs); variable-range hopping (VRH)
- Citation
- IEEE Transactions on Electron Devices, v.62, no.2, pp.587 - 592
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Transactions on Electron Devices
- Volume
- 62
- Number
- 2
- Start Page
- 587
- End Page
- 592
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18861
- DOI
- 10.1109/TED.2014.2381218
- ISSN
- 0018-9383
- Abstract
- Local dot-like emissions in InGaN/GaN-based light-emitting diodes under both forward and reverse biases are investigated by carefully examining their locations and electroluminescence spectra. The effects of dot-like emissions on electrical and optical performances are also discussed. From the properties of the leakage-component dependence on electric field and temperature, the dominant reverse leakage mechanism is investigated as a function of bias from 100 to 400 K. It is concluded that the underlying mechanism of local dot-like emissions are related to threading dislocations under both reverse and forward biases.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
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