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Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Padopen access
- Authors
- Kim, Jong-Ho; Lee, Yong Won; Im, Hyeong-Seop; Oh, Chan-Hyoung; Shim, Jong-In; Kang, Daesung; Seong, Tae-Yeon; Amano, Hiroshi
- Issue Date
- Dec-2019
- Publisher
- Electrochemical Society, Inc.
- Citation
- ECS Journal of Solid State Science and Technology, v.9, no.1, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS Journal of Solid State Science and Technology
- Volume
- 9
- Number
- 1
- Start Page
- 1
- End Page
- 6
- ISSN
- 2162-8769
- Abstract
- To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Omega. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm(2) than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers. (C) The Author(s) 2019. Published by ECS.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)