Multi-stack extreme-ultraviolet pellicle with out-of-band reduction
- Authors
- Lee, Sung gyu; Kim, Guk jin; Kim, In seon; Ahn, Jin ho; Park, Jin-Goo; Oh, Hye keun
- Issue Date
- May-2015
- Publisher
- SPIE
- Keywords
- Contamination; EUV Pellicle; Extreme-Ultraviolet Lithography; Multi-Stack Pellicle; Out-of-Band Radiation
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.9422
- Indexed
- SCIE
SCOPUS
- Journal Title
- Proceedings of SPIE - The International Society for Optical Engineering
- Volume
- 9422
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/20598
- DOI
- 10.1117/12.2086052
- ISSN
- 0277-786X
- Abstract
- The out-of-band (OoB) radiation that can cause serious aerial image deformation on the wafer is reported. In order to check the maximum allowable OoB radiation reflectivity at the extreme ultra-violet (EUV) pellicle, we simulated the effect of OoB radiation and found that the maximum allowable OoB radiation reflectivity at the pellicle should be smaller than 15 % which satisfy our criteria such as aerial image critical dimension (CD), contrast, and normalized image log slope (NILS). We suggested a new multi-stack EUV pellicle that can have high EUV transmission, minimal OoB radiation reflectivity, and enough deep ultra-violet transmission for inspection and alignment of the mask through the EUV pellicle. © 2015 SPIE.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
- COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
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