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Multi-stack extreme-ultraviolet pellicle with out-of-band reduction

Authors
Lee, Sung gyuKim, Guk jinKim, In seonAhn, Jin hoPark, Jin-GooOh, Hye keun
Issue Date
May-2015
Publisher
SPIE
Keywords
Contamination; EUV Pellicle; Extreme-Ultraviolet Lithography; Multi-Stack Pellicle; Out-of-Band Radiation
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v.9422
Indexed
SCIE
SCOPUS
Journal Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
9422
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/20598
DOI
10.1117/12.2086052
ISSN
0277-786X
Abstract
The out-of-band (OoB) radiation that can cause serious aerial image deformation on the wafer is reported. In order to check the maximum allowable OoB radiation reflectivity at the extreme ultra-violet (EUV) pellicle, we simulated the effect of OoB radiation and found that the maximum allowable OoB radiation reflectivity at the pellicle should be smaller than 15 % which satisfy our criteria such as aerial image critical dimension (CD), contrast, and normalized image log slope (NILS). We suggested a new multi-stack EUV pellicle that can have high EUV transmission, minimal OoB radiation reflectivity, and enough deep ultra-violet transmission for inspection and alignment of the mask through the EUV pellicle. © 2015 SPIE.
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles

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Park, Jin Goo
ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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