Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory
- Authors
- Yoon, Jungkyu; Hong, Seunghyeon; Song, Yong Won; Ahn, Ji-Hoon; Ahn, Seung-Eon
- Issue Date
- Oct-2019
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.115, no.15, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 115
- Number
- 15
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2098
- DOI
- 10.1063/1.5119948
- ISSN
- 0003-6951
- Abstract
- Hafnia ferroelectric materials have gained prominence as promising materials for advanced memory applications due to their high scalability and full-complementary metal oxide semiconductor compatibility. In this paper, we present a comprehensive study on the electrical properties of Pt/Hf0.5Zr0.5O2/TiN asymmetric ferroelectric tunnel junction (FTJ) devices. The ferroelectric behavior of 4- and 5-nm Hf0.5Zr0.5O2 (HZO) thin films was confirmed by using piezoresponse force microscopy and conductive-atomic force microscopy. The typical current-voltage characteristics of the FTJ devices with two resistance states due to the tunneling electroresistance (TER) effect have been analyzed using a direct tunneling model based on the Wentzel-Kramers-Brillouin approximation. Further, we have proposed a method to extract the effective mass of the HZO thin film by numerical analysis using the MOS leakage current model. Finally, a dependence of the TER on the HZO thickness is analyzed to realize a high TER ratio.
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