Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
- Authors
- Jin, Hyun Soo; Cho, Young Jin; Lee, Sang-Moon; Kim, Dae Hyun; Kim, Dae Woong; Lee, Dongsoo; Park, Jong-Bong; Won, Jeong Yeon; Lee, Myoung-Jae; Cho, Seong-Ho; Hwang, Cheol Seong; Park, Tae Joo
- Issue Date
- Oct-2014
- Publisher
- Elsevier BV
- Keywords
- ALD; III-V; MOSFETs; Sulfur Passivation; H2S
- Citation
- Applied Surface Science, v.315, pp.178 - 183
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Surface Science
- Volume
- 315
- Start Page
- 178
- End Page
- 183
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21545
- DOI
- 10.1016/j.apsusc.2014.07.123
- ISSN
- 0169-4332
- Abstract
- Atomic-layer-deposited Al2O3 films were grown on ultrathin-body In-0.53 Ga0.47As substrates for IIIV compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH4)(2)S) solution, and dry processing using post-deposition annealing (PDA) under a H2S atmosphere. The PDA under the H2S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH4)(2)S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH4)(2)S wet-treatment than the PDA under a H2S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H2S atmosphere following (NH4)(2)S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices. (C) 2014 Elsevier B.V. All rights reserved.
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