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Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs
- Authors
- Bae, Hagyoul; Seo, Hyojoon; Jun, Sungwoo; Choi, Hyunjun; Ahn, Jaeyeop; Hwang, Junseok; Lee, Jungmin; Oh, Saeroonter; Bae, Jong-Uk; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong
- Issue Date
- Oct-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous oxide semiconductor; density-of-states (DOS); differential ideality factor; InGaZnO (IGZO); optoelectronic; subgap thin-film transistor (TFT); subthreshold; TFT
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.10, pp.3566 - 3569
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 61
- Number
- 10
- Start Page
- 3566
- End Page
- 3569
- ISSN
- 0018-9383
- Abstract
- A sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias-dependent differential change in the difference of ideality factors (d Delta eta(V-GS)/dV(GS)) between dark and sub-bandgap photonic excitation condition is employed. With the sub-bandgap photons (h nu < E-g), the photonic excitation of electrons is confined only from the localized DOS over the bandgap. We applied the proposed technique to a-InGaZnO TFTs with W/L = 50/25 mu m/mu m and extracted the energy distribution of the intrinsic DOS for the localized states over the bandgap.
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