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IEEE Transactions on Electron Devices

Journal Title

  • IEEE Transactions on Electron Devices

ISSN

  • E 1557-9646 | P 0018-9383

Publisher

  • Institute of Electrical and Electronics Engineers

Listed on(Coverage)

JCR 1997-2019
SJR 1999-2019
CiteScore 2011-2019
SCI 2010-2019
SCIE 2010-2021
CC 2016-2021
SCOPUS 2017-2020

Active

  • Active

    based on the information

    • SCOPUS:2020-10

Country

  • USA

Aime & Scopes

  • IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

Homepage

Article List

1 - 8 out of 8 results.

SCIESCOPUS
Heterogeneous 3-D Sequential CFET With Strain-Engineered Ge (100) Top-Channel pMOSFET on Bulk Si (100) nMOSFETGo to Link

Lim, Hyeongrak; Kim, Seong Kwang; Lee, Seung Woo; Park, Youngkeun; Jeong, Jaejoong; Jeong, Hojin; Lim, Jinha; Geum, Dae-Myeong; Han, Jaehoon; Kim, Younghyun, et al.

ArticleIssue Date2025CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.72, no.7, pp 1 - 7PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review

신상훈

ArticleIssue Date2019CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.11, pp 4556 - 4565PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Suppression of Light Influx Into the Channel Region of Photosensitive Thin-Film TransistorsGo to Link

Oh, Saeroonter; Bae, Jong Uk; Park, Kwon-Shik; Kang, In Byeong

ArticleIssue Date2015CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.12, pp.4057 - 4062PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTsGo to Link

Bae, Hagyoul; Seo, Hyojoon; Jun, Sungwoo; Choi, Hyunjun; Ahn, Jaeyeop; Hwang, Junseok; Lee, Jungmin; Oh, Saeroonter; Bae, Jong-Uk; Choi, Sung-Jin, et al.

ArticleIssue Date2014CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.10, pp.3566 - 3569PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Technology Assessment Methodology for Complementary Logic Applications Based on Energy-Delay OptimizationGo to Link

Wei, Lan; Oh, Saeroonter; Wong, H. -S. Philip

ArticleIssue Date2011CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.8, pp.2430 - 2439PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Physics-Based Compact Model for III-V Digital Logic FETs Including Gate Tunneling Leakage and Parasitic CapacitanceGo to Link

Oh, Saeroonter; Wong, H. -S. Philip

ArticleIssue Date2011CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.4, pp.1068 - 1075PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
A Physics-Based Compact Model of III-V FETs for Digital Logic Applications: Current-Voltage and Capacitance-Voltage CharacteristicsGo to Link

Oh, Saeroonter; Wong, H. -S. Philip

ArticleIssue Date2009CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.2917 - 2924PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Effect of Parasitic Resistance and Capacitance on Performance of InGaAs HEMT Digital Logic CircuitsGo to Link

Oh, Saeroonter; Wong, H. -S. Philip

ArticleIssue Date2009CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.5, pp.1161 - 1164PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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