Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs
- Authors
- Oh, Chan-Hyoung; Shin, Dong-Soo; Shim, Jong-In
- Issue Date
- Sep-2019
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Internal quantum efficiency; forward voltage; light-emitting diodes; radiative current; nonradiative current
- Citation
- IEEE Photonics Technology Letters, v.31, no.17, pp 1441 - 1444
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE Photonics Technology Letters
- Volume
- 31
- Number
- 17
- Start Page
- 1441
- End Page
- 1444
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2159
- DOI
- 10.1109/LPT.2019.2930756
- ISSN
- 1041-1135
1941-0174
- Abstract
- In InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs), carrier accumulation in MQWs due to the saturation of the radiative recombination rate affects the internal-quantum-efficiency (IQE) and forward-voltage (V-F) characteristics simultaneously. In this letter, we investigate the interrelation between the IQE and V-F at an operating current density, using 31 blue LEDs with MQW active layers grown under slightly different conditions. The general trend observed demonstrates that V-F decreases as the IQE increases. We analyze this interrelation between the IQE, and V-F through separation of radiative and nonradiative current densities, and propose to use the active efficiency (AE) to quantify the performance of the active layer more precisely. We examine the two cases where only the radiative (nonradiative) current density changes and establish that the increase of the radiative current density is more desirable than the decrease of the nonradiative current density in improving the AE of the device.
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