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Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements
- Authors
- Han, Dong-Pyo; Zheng, Dong-Guang; Oh, Chan-Hyoung; Kim, Hyunsung; Shim, Jong-In; Shin, Dong-Soo; Kim, Kyu-Sang
- Issue Date
- Apr-2014
- Publisher
- American Institute of Physics
- Keywords
- BLUE; INTENSITY; CURRENTS; EFFICIENCY; GREEN
- Citation
- Applied Physics Letters, v.104, no.15, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 104
- Number
- 15
- Start Page
- 1
- End Page
- 5
- ISSN
- 0003-6951
- Abstract
- Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device. (C) 2014 AIP Publishing LLC.
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Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)