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Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance
- Issue Date
- Mar-2014
- Publisher
- AMER INST PHYSICS
- Keywords
- THIN-FILMS; MEMORY; IMPEDANCE SPECTROSCOPY
- Citation
- APPLIED PHYSICS LETTERS, v.104, no.12, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 104
- Number
- 12
- Start Page
- 1
- End Page
- 5
- ISSN
- 0003-6951
1077-3118
- Abstract
- The capacitance (C) and the resistance (R) were measured at various states as the reset process progressed in bipolar-resistance-switching Ta/TaOx/Pt thin film capacitors. The reset process was found to undergo three sequential stages where C and R showed different behavior: increasing C and constant R before an abrupt reset transition, the rapid increase of both C and R upon transition, and saturated C thereafter. These behaviors can be explained in terms of the annihilation of the oxygen vacancies followed by rupture of the conducting channels. (C) 2014 AIP Publishing LLC.
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)