Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Co-sputtering 방법으로 증착된 실리콘 산화아연 박막의 특성 분석Characterization of silicon zinc oxide thin films deposited by co-sputtering
- Other Titles
- Characterization of silicon zinc oxide thin films deposited by co-sputtering
- Issue Date
- Jul-2013
- Publisher
- 대한전기학회
- Citation
- 2013년도 대한전기학회 제44회 하계학술대회, pp 1245 - 1246
- Pages
- 2
- Indexed
- OTHER
- Journal Title
- 2013년도 대한전기학회 제44회 하계학술대회
- Start Page
- 1245
- End Page
- 1246
- Abstract
- Effects of Si on ZnO structure of Transparent thin film transistors (TFTs) using silicon zinc oxide (SZO) films as an active chnannel were extensively investigated. The SZO films were deposited at room temperature via co-sputtering by silicon (99.999%) target and zinc oxide (99.999%) target. The film characteristics of the Si-Zn-O film, such as roughness, grain size, atomic%, and transmittance, were observed in terms of the Si content.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)