Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures
- Authors
- Park, Seoung-Hwan; Shim, Jong-In
- Issue Date
- Jun-2013
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.102, no.22, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 102
- Number
- 22
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/27609
- DOI
- 10.1063/1.4809759
- ISSN
- 0003-6951
- Abstract
- The carrier density dependence of the polarization switching characteristics of the light emission in deep-ultraviolet AlGaN/AlN quantum well structures was investigated using the multiband effective-mass theory and non-Markovian model. The critical Al composition from transverse electric (TE) to transverse-magnetic (TM) polarization decreases gradually with increasing carrier density. This can be explained by the fact that matrix elements for TM-polarization above the band-edge (k(parallel to) = 0) is much larger than those for TE-polarization. That is, the light emission for TM-polarization becomes larger than that for TE-polarization at higher carrier density because carriers will occupy higher states above k(parallel to) = 0 in the conduction and valence bands. As a result, the critical Al composition is reduced with increasing carrier density. Also, the critical Al composition is observed to decrease with increasing well width. (C) 2013 AIP Publishing LLC.
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