Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
- Authors
- Lee, Dong-Kwon; Kwon, Se-Hun; Ahn, Ji-Hoon
- Issue Date
- Jul-2019
- Publisher
- Elsevier BV
- Keywords
- Titanium dioxide; Tin dioxide; Rutile structure; Dynamic random-access memory capacitor; Atomic layer deposition
- Citation
- Materials Letters, v.246, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials Letters
- Volume
- 246
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2767
- DOI
- 10.1016/j.matlet.2019.03.018
- ISSN
- 0167-577X
- Abstract
- Rutile-TiO2 thin films have potential for use in high-k applications, such as dynamic random-access memory capacitors; however, they are difficult to realize without using noble-metal-based oxide substrates. Therefore, we proposed a new approach for the preparation of rutile TiO2 by a small amount of Sn doping and the insertion of ultra-thin SnO2 to achieve enhanced dielectric performance without using noble-metal-based electrodes. It was confirmed that the crystallinity of rutile TiO2 was remarkably enhanced in Sn-doped TiO2 formed on an ultra-thin SnO2 interlayer. Moreover, 10 nm-thick Sn-doped TiO2 thin film on a 1-nm SnO2 interlayer exhibited a high dielectric constant of about 80. (C) 2019 Elsevier B.V. All rights reserved.
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