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W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process

Authors
Kim, MinchulChoi, KwangseokKim, Junghyun
Issue Date
Jun-2019
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Frequency multiplier; millimeter wave; pseudomorphic high electron transistor (pHEMT); W-band
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.29, no.6, pp 400 - 402
Pages
3
Indexed
SCI
SCIE
SCOPUS
Journal Title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume
29
Number
6
Start Page
400
End Page
402
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2890
DOI
10.1109/LMWC.2019.2913307
ISSN
1531-1309
1558-1764
Abstract
A novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f(0)) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-mu mGaAs pHEMT process. The measured results show a peak conversion gain and saturated output power of -4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of -23 dB at 96 GHz with a moderate chip size of 1.0 x 2.0 mm(2).
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KIM, JUNG HYUN
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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