W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process
- Authors
- Kim, Minchul; Choi, Kwangseok; Kim, Junghyun
- Issue Date
- Jun-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Frequency multiplier; millimeter wave; pseudomorphic high electron transistor (pHEMT); W-band
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.29, no.6, pp 400 - 402
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 29
- Number
- 6
- Start Page
- 400
- End Page
- 402
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2890
- DOI
- 10.1109/LMWC.2019.2913307
- ISSN
- 1531-1309
1558-1764
- Abstract
- A novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f(0)) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-mu mGaAs pHEMT process. The measured results show a peak conversion gain and saturated output power of -4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of -23 dB at 96 GHz with a moderate chip size of 1.0 x 2.0 mm(2).
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