Evaluation of very dilute alkaline solutions for wafer cleaning with megasonic irradiation
- Authors
- Jeong, Ji hyun; Kang, Bong Kyun; Kim, Min su; Sohn, Hong Seong; Busnaina, Ahmed.A.; Park, Jin-Goo
- Issue Date
- Dec-2012
- Publisher
- Scitec Publications Ltd.
- Keywords
- Dilute alkaline solution; Etch rate; Megasonic; Particle removal efficiency; Surface roughness
- Citation
- Solid State Phenomena, v.195, pp 181 - 184
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Solid State Phenomena
- Volume
- 195
- Start Page
- 181
- End Page
- 184
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30545
- DOI
- 10.4028/www.scientific.net/SSP.195.181
- ISSN
- 1012-0394
1662-9779
- Abstract
- In the semiconductor wafer cleaning, ammonium hydroxide based APM (ammonium peroxide mixture) has been widely used to remove particles and organic contaminants [. However as the film thickness and line width of semiconductor structure scales down rapidly, the material losses by etching reaction of alkaline chemicals can cause serious problem in yield loss due to electric failure. The presence of H2O2 could enhance the material loss on silicon wafer. Very dilute alkaline chemicals might be of interest since it could minimize any possible ionic contamination or chemical residues from chemicals as long as we control the surface roughness and particle removal efficiency. Also the characterization of these very dilute alkaline chemicals will be very useful for particle removal in gas dissolved DI water.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30545)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.