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Droop studies for high-performance InGaN blue light-emitting diodes

Authors
Shim, Jong-InKim, HyunsungHan, Dong-PyoShin, Dong-Soo
Issue Date
Jul-2013
Publisher
IEEE
Citation
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, pp.1 - 2
Indexed
SCOPUS
Journal Title
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Start Page
1
End Page
2
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30897
DOI
10.1109/CLEOPR.2013.6600207
Abstract
An origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. © 2013 IEEE.
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