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Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulationsopen access
- Authors
- Ryu, Han-Youl; Shim, Jong In
- Issue Date
- Aug-2013
- Publisher
- IEEE
- Citation
- 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013, pp.115 - 116
- Indexed
- SCIE
SCOPUS
- Journal Title
- 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013
- Start Page
- 115
- End Page
- 116
- Abstract
- Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using three-dimensional finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths. © 2013 IEEE.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)