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Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD-antimony surfactant effect
- Authors
- Baranowski, Michal .; Latkowska, Magdalena; Kudrawiec, Robert; Syperek, Marcin; Misiewicz, Jan; Sadasivam, Karthikeyan Giri; Shim, Jong-In; Lee, June Key
- Issue Date
- Oct-2012
- Publisher
- Institute of Physics Publishing
- Citation
- Semiconductor Science and Technology, v.27, no.10, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Semiconductor Science and Technology
- Volume
- 27
- Number
- 10
- Start Page
- 1
- End Page
- 6
- ISSN
- 0268-1242
- Abstract
- The influence of antimony on the optical quality of InGaN/GaN multi-quantum well (MQW) grown by metalorganic chemical vapor deposition has been investigated by means of photoluminescence and time-resolved photoluminescence for a set of samples obtained for the Sb/(In+Ga) flow ratio varying from 0% to 0.12%. It has been observed that by using proper Sb flow it is possible to improve the optical properties of InGaN/GaN MQWs; however, too large Sb flows cause their optical quality to deteriorate. The Sb-related improvement of optical properties has been observed as (i) similar to 30% increase of PL intensity, (ii) reduction of temperature-induced photoluminescence quenching and (iii) elongation of PL decay time by 30%. The atomic force microscopy study and second ion mass spectrometry profiles show that optical quality improvement is connected with surfactant properties of antimony.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)