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Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization
- Authors
- 신동수
- Issue Date
- 6-Feb-2020
- Place
- San Francisco, USA
- Conference Name
- SPIE Photonics West 2020
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Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)